| 摘要 |
PROBLEM TO BE SOLVED: To establish technology through which a transistor manufacturer can facilitate the manufacturing of a unique high performance transistor. SOLUTION: The semiconductor substrate for transistor comprises a substrate 1, a first conductivity type first semiconductor layer 2-1 formed on the upper surface side of the substrate 1, a second conductivity type second semiconductor layer (SiGe layer) 2-2 formed on the upper surface side of the first semiconductor layer 2-1. Such a substrate (10) for transistor can be provided to a transistor manufacturer under a state where nothing is formed on the lower side of the substrate 1 and the upper surface side of a third semiconductor layer 2-3. The transistor manufacturer can manufacture an SiGe transistor of desired performance using such a transistor substrate. Such a substrate is used for manufacturing a transistor of SiGe/Si multilayer structure having a variety of performances and can impart common performance to that transistor. The concentration of Ge in the second semiconductor layer 2-2 must be higher than 2.5 atom% as a necessary condition for imparting such performance. COPYRIGHT: (C)2003,JPO
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