发明名称 POLISHING METHOD AND ELECTROLYTIC POLISHING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To improve the quality of copper wiring and at the same time reliability in the copper wiring by accurately detecting an end point when a copper film is electrolytically polished in the formation of copper groove wiring. <P>SOLUTION: In the polishing method, a metal film 32 formed on the surface of a wafer 31 is electrolytically polished so that a recess (not illustrated) formed on the surface of the wafer 31 is filled, and the end point of the electrolytic polishing of the metal film 32 is determined according to a change in current waveform obtained when the metal film 32 is electrolytically polished. The electrolytic polishing device achieves the polishing method, and has a current detector 22 for detecting the current waveform obtained when the metal film 32 is electrolytically polished and an end point determination section 23 for determining the electrolytic polishing end point of the metal film 32 according to the change in current obtained by the current detector 22. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003168665(A) 申请公布日期 2003.06.13
申请号 JP20010366341 申请日期 2001.11.30
申请人 SONY CORP 发明人 SATO SHUZO;NOGAMI TAKESHI;YASUDA YOSHIYA;ISHIHARA SHIGEO
分类号 B24B1/00;B23H3/00;B23H5/08;B24B37/00;B24B37/013;B24B49/04;B24B49/10;C25F3/16;H01L21/304;H01L21/3063;H01L21/321;H01L21/768 主分类号 B24B1/00
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