| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce unevenness in resist patterns on a mask due to a fogging effect in an exposure step in mask production (difference in dimension due to pattern density irregularity) and to provide a mask having high dimensional accuracy required for photolithography by which dimension equal to or below the wavelength of light for exposure (with a large numerical value of MEEF (mask error enhancement factor)) is formed on a wafer. <P>SOLUTION: A resist pattern forming method includes the steps of forming a light shielding film 2 on the whole area of the top of a transparent substrate 1, forming a resist layer 3 and an organic film 4 in order on the whole area of the top of the light shielding film 2, carrying out exposure in prescribed patterns from the top of the organic film 4, and the resist layer 3 and the organic film 4 are peeled and developed to form a resist layer 3 having prescribed patterns. <P>COPYRIGHT: (C)2003,JPO |
