| 摘要 |
PURPOSE:To prevent high frequency radiation noise from a semiconductor integrated circuit device including a digital circuit which operates at a high speed. CONSTITUTION:Conductive layers 506, 507, 508 are provided in an uppermost layer of a multilayer interconnection structure to cover specified circuit parts 501, 502 and signal lines 510, 511, 512, 514, 552 of a semiconductor integrated circuit device 500, and the uppermost layer conductive layers 506, 507, 508 are connected to a fixed electric potential. The uppermost layer conductive layer is formed on only a region which becomes a high frequency radiation noise generation source; thereby, it is possible to absorb radiation noise from the high frequency radiation noise generation source effectively and to use a remaining region of the uppermost layer for other wiring layer. |
