发明名称 METHOD AND APPARATUS TO OVERCOME ANOMALIES IN COPPER SEED LAYERS AND TO TUNE FOR FEATURE SIZE AND ASPECT RATIO
摘要 A method and apparatus for electrochemically depositing a metal into a high aspect ratio structure on a substrate are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a first conductive material disposed thereon in a processing chamber containing an electrochemical bath, depositing a second conductive material on the first conductive material as the conductive material is contacted with the electrochemical bath by applying a plating bias to the substrate while immersing the substrate into the electrochemical bath, and depositing a third conductive material in situ on the second conductive material by an electrochemical deposition technique to fill the feature. The bias may include a charge density between about 20 mA<*>sec/cm<2> and about 160 mA<*>sec/cm<2>. The electrochemical deposition technique may include a pulse modulation technique.
申请公布号 WO0190446(A3) 申请公布日期 2003.06.12
申请号 WO2001US15200 申请日期 2001.05.10
申请人 APPLIED MATERIALS, INC. 发明人 HEY, PETER;KWAK, BYUNG-SUNG, LEO
分类号 C25D5/10;C25D5/18;C25D7/12;H01L21/28;H01L21/288;H05K3/42 主分类号 C25D5/10
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