| 摘要 |
<p>A method of fabricating a molecular electronic device (10) or crossbar memory device (60) is provided. The device comprises at least one pair of crossed wires (12, 14) and a molecular switch film(16) therebetween. The method comprises: (a) forming at least one bottom electrode (12) on a substrate (22) by first forming a first layer (12) on the substrate (22) and patterning the first layer (12) to form the bottom electrode (12) by an imprinting technique; (b) forming the molecular switch film (16) on top of the bottom electrode (12); (c) optionally forming a protective layer (24) on top of the molecular switch film (16) to avoid damage thereto during further processing; (d) coating a polymer layer (26) on top of the protective layer (24) and patterned the polymer layer (26) by the imprinting method to form openings that expose portions of the protective layer (24); and (e) forming at least one top electrode (12) on the protective layer (24) through the openings in the polymer layer (26) by first forming a second layer (14) on the polymer layer (26) and patterning the second layer (14). The imprinting method can be used to fabricate nanoscale patterns over a large area at high speeds acceptable in industrial standards. Consequently, it can be used to fabricate nanoscale molecular devices (10), e.g., crossbar memory circuits (60).</p> |
