| 摘要 |
A resist patterning process is provided comprising the steps of (a) applying a resist composition onto a substrate to form a resist film, (b) prebaking the resist film, (c) exposing the prebaked resist film to a pattern of radiation, (d) post-exposure baking the exposed resist film, (e) developing the resist film to form a resist pattern, and (f) post baking the resist pattern for causing thermal flow. The resist composition contains a polymer comprising structural units of formula [I] in a backbone and having acid labile groups on side chains as a base resin and a photoacid generator. X1 and X2 are -O-, -S-, -NR-, -PR- or -CR2-, R is H or C1-20 alkyl, and m is 0 or an integer of 1 to 3. The invention is effective for improving the degree of integration of semiconductor LSI.
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