| 摘要 |
PURPOSE: To provide a semiconductor device maintaining a current-driving capability and preventing the short channel effect by activating the impurities of a gate electrode in a FET for logic element without spoiling the quality of a gate insulator film in a FET for memory element and a method of manufacturing it. CONSTITUTION: A semiconductor device 100 is provided with a semiconductor substrate 10, gate electrodes 50 that are insulated from the semiconductor substrate 10 by a gate insulator film 60 in a memory region 150, in which a FET for a memory element 20 is formed, of the surface of the semiconductor substrate and gate electrodes 90 that are insulated from the semiconductor substrate by the gate insulator film 80 in a logic region 160, in which a logic circuit controlling the FET for memory element is formed, of the regions of the semiconductor substrate. The part at which the gate electrode makes a contact with the gate insulator film and the part at which the gate electrode makes a contact with the gate insulator film are formed of materials that are different from each other.
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