| 摘要 |
PURPOSE: A test pattern of a semiconductor device is provided to be capable of accurately measuring contact resistance by forming a contact chain test pattern made of concave shaped active regions and inverse concave shaped metal lines. CONSTITUTION: An isolation layer(35) is formed in a substrate for defining concave shaped active regions(33). An interlayer dielectric having contact holes is formed on the resultant structure. Contact plugs(41) are filled into the contact holes formed in the interlayer dielectric. Inverse concave shaped metal lines(43) are formed on the resultant structure for electrically connecting to the contact plugs(41). At this time, the end portions of the inverse concave shaped metal lines(43) and concave shaped active regions(33) are connected with each other when looking down the resultant structure. At the time, the contact plugs are located between active regions and metal lines, thereby equally conserving the contact surface between the contact plug, and the active region and metal line.
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