发明名称 Reduced particulate etching
摘要 A platen for use in a dry etching process for substrate production, the platen having a surface susceptible to chipping and/or particle generation from the dry etching process and a coating applied to at least a portion of the surface for rendering the surface less susceptible to chipping and/or particle generation, the coating comprising a silicon carbide coating
申请公布号 US6576981(B1) 申请公布日期 2003.06.10
申请号 US20010898267 申请日期 2001.07.03
申请人 LSI LOGIC CORPORATION 发明人 AOKI KATSUMI
分类号 H01J37/32;(IPC1-7):H01L23/58 主分类号 H01J37/32
代理机构 代理人
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