发明名称 |
Applications of a semi-empirical, physically based, profile simulator |
摘要 |
A method and an apparatus for a semi-empirical process simulation using a calibrated profile simulator to create a reactor model which can predict neutral and ion flux distributions on a substrate as a function of the reactor settings include providing a set of conditions characterized by unique reactor settings. Wafers are processed under each condition. Etch or deposition rates and surface profiles are measured and used in the calibrated profile simulator to derive the flux distributions. The flux distributions data generated by the processes are then used to create a reactor model.
|
申请公布号 |
US6577915(B1) |
申请公布日期 |
2003.06.10 |
申请号 |
US20000608163 |
申请日期 |
2000.06.30 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
COOPERBERG DAVID;VAHEDI VAHID |
分类号 |
C23C14/54;C23C16/52;H01J37/32;(IPC1-7):G05B13/02;H01L21/00 |
主分类号 |
C23C14/54 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|