发明名称 Method for preventing unwanted programming in an MRAM configuration
摘要 Unwanted programming by stray magnetic fields is prevented in an MRAM configuration. Compensating currents that counteract the stray magnetic fields are strategically conducted through the MRAM configuration.
申请公布号 US6577527(B2) 申请公布日期 2003.06.10
申请号 US20010999324 申请日期 2001.10.31
申请人 INFINEON TECHNOLOGIES AG 发明人 FREITAG MARTIN;LAMMERS STEFAN;GOGL DIETMAR;ROEHR THOMAS
分类号 G11C11/14;G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L27/22;H01L43/08;(IPC1-7):G11C11/00 主分类号 G11C11/14
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