| 摘要 |
PURPOSE: A method for fabricating a quantum hole is provided to fabricate a semiconductor light emitting device for generating light of a predetermined color by forming the quantum hole having a fine diameter of a nanometer size. CONSTITUTION: Ions are discharged from an ion gun(40) at a high speed. The discharged ions are focused to form an ion beam. The ion beam is vertically and horizontally deflected by using an injection deflecting unit(46,48) and is injected into a plurality of positions for forming the quantum hole of a semiconductor substrate(44) located in the front of the injection deflecting unit. The speed of the ion beam is controlled by an acceleration speed of the ion beam so that the ions of the ion beam is not injected into the semiconductor substrate because of the impact of the ion beam incident on the semiconductor substrate and the surface of the semiconductor substrate is physically eliminated. The time interval of incidence of the ion beam is set up to have a range in which a quantum hole of a single ion beam type is formed in the semiconductor substrate. The size of the ion beam is properly determined according to the size of the quantum hole and the ion beam is controlled according to the determination value to form the quantum hole.
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