| 摘要 |
PURPOSE: A method for melting silicon and dopant is provided to grow a silicon ingot such that the silicon ingot has desired length and diameter by filling a predetermined amount of silicon melt in a quartz crucible. CONSTITUTION: A silicon ingot(101) is grown in one of silicon ingot grower chambers. The grown silicon ingot is transferred to other silicon ingot grower chambers(102). Then, silicon raw material is stacked in a quartz crucible accommodated in the silicon ingot grower chambers(102). First silicon melt is obtained by heating silicon raw material stacked in the quartz crucible. Then, the silicon ingot(101) is dipped into first silicon melt. After that, the silicon ingot(101) dipped into first silicon melt is melted, thereby forming second silicon melt having volume and weight greater than those of first silicon melt.
|
