| 摘要 |
PURPOSE: A method for splitting wafer using cleavage is provided to be capable of reducing the streaking phenomenon generated at the lateral portion of a chip and the chipping phenomenon generated at the device formation portion of a wafer. CONSTITUTION: A plurality of cleaved portions are formed at a device formation surface of a wafer(11). At this time, a semiconductor device is formed at the wafer. A surface protecting tape(17) is attached at the device formation surface of the wafer. A cleavage process is carried out at the resultant structure according to the crystal direction of the wafer by using the cleaved portion as a starting point. Then, a grinding process is carried out at the back side of the wafer. Preferably, a polishing process is further carried out at the back side of the wafer.
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