发明名称 STORAGE CAPACITOR STRUCTURE
摘要 <p><P>PROBLEM TO BE SOLVED: To prevent an upper electrode, a signal line, a pixel electrode, and a lower electrode from short-circuit by using a conductive residual substance left on the dielectric layer of a capacitor. <P>SOLUTION: A storage capacitor structure is equipped with a 1st capacitor electrode on a substrate, a capacitor dielectric layer on the 1st capacitor electrode, a 2nd capacitor electrode on the capacitor dielectric layer, an inactivated layer on the 2nd capacitor electrode, and a pixel electrode layer on the inactivated layer. The 2nd capacitor electrode has smaller area than the 1st capacitor electrode. The inactivated layer has an opening part for exposing part of the 2nd capacitor electrode. The pixel electrode layer and 2nd capacitor electrode are electrically connected through the opening part in the inactivated layer. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003161961(A) 申请公布日期 2003.06.06
申请号 JP20020310039 申请日期 2002.10.24
申请人 CHI MEI ELECTRONICS CORP 发明人 WU YUAN-LIANG;WANG TONG-JUNG;KUO CHIN-JUNG
分类号 G02F1/1368;H01L21/02;(IPC1-7):G02F1/136 主分类号 G02F1/1368
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