| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride system semiconductor light emitting element which can realize sufficient light absorption without use of an InGaN light absorbing layer having higher In composition. SOLUTION: This nitride system semiconductor light emitting element comprises an MQW light emitting layer 9 having the predetermined oscillation wavelength, an n-side light absorbing layer 6, and a p-side light absorbing layer 14 consisting of InGaN including the In composition of about 10% to which a donor impurity (Si) and an acceptor impurity (Mg) are doped. Moreover, these layers 6 and 14 are respectively formed in the lower side and upper side of the MQW light emitting layer 9 to absorb the light in the oscillation wavelength of the MQW light emitting layer 9. COPYRIGHT: (C)2003,JPO
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