| 摘要 |
PROBLEM TO BE SOLVED: To carry out the same calculation in a two-dimensional simulation with simple input data as in a three-dimensional simulation. SOLUTION: The semiconductor simulation method for simulating electrical characteristics of a semiconductor comprised of a MOS transistor, comprises a process (steps S1-S5) where a carrier distribution in the boundary between silicon and an element isolation region is got in the simulation and on the basis of this simulation result, the MOS transistor having the same carrier distribution is assumed to be a parasitic MOS transistor and a process (step S6) where the electrical characteristics in the MOS transistor of a calculation target are simulated and compensated by using the electrical characteristics of the assumed parasitic MOS transistor. COPYRIGHT: (C)2003,JPO
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