发明名称 SEMICONDUCTOR PROTECTION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor protection device that has improved withstand amount against overvoltage surge during power supplying. SOLUTION: An internal circuit 2 to be protected, which operates with power supply from a power supply pad 3 on a high potential side and a power supply pad 4 on a low potential side, is connected to a protection circuit 1 between the pad 3 and pad 4 which are integrated. The protection circuit 1 comprises a transistor 5 and a resistance 7, which are connected in series. The resistance 7 can alleviate the overvoltage, which flows when overvoltage surge is given between the power supply pads 3 and 4, and the transistor 5 breaks down, thus enabling the prevention of the protection circuit 1 itself from being broken down. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003163271(A) 申请公布日期 2003.06.06
申请号 JP20010362221 申请日期 2001.11.28
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 ICHIJO HISAO
分类号 H01L27/04;H01L21/822;H01L21/8238;H01L27/06;H01L27/092;H03K17/16;H03K17/60;H03K19/003;(IPC1-7):H01L21/822;H01L21/823 主分类号 H01L27/04
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