| 发明名称 |
Integrated series schottky and FET to allow negative drain voltage |
| 摘要 |
A high side driver chip for MOSgated devices which controls a non resistive, or non inductive load has a vertical conduction refresh MOSFET integrated into the chip for connecting a Vs node to ground to discharge the load capacitance. A Schottky diode is also integrated with the refresh MOSFET to prevent forward conduction of a parasitic diode of the vertical conduction MOSFET.
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| 申请公布号 |
US2003102886(A1) |
申请公布日期 |
2003.06.05 |
| 申请号 |
US20030338077 |
申请日期 |
2003.01.06 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
RANJAN NIRAJ |
| 分类号 |
H01L29/872;H01L21/8234;H01L27/06;H01L29/06;H01L29/47;H01L29/739;H01L29/78;H03K17/0416;H03K17/06;H03K17/687;(IPC1-7):H03K19/013 |
主分类号 |
H01L29/872 |
| 代理机构 |
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