发明名称 PLASMA PROCESSING SYSTEM
摘要 A low−cost plasma processing system in which reproducibility and stability can be enhanced while reducing power loss. The plasma processing system (1) comprises a main body (2) and an incidental equipment (3). The incidental equipment (3) comprises a power supply unit (5) for supplying power to a process chamber (4), and a plurality of dry pumps (6, 7). The power supply unit (5) comprises a matching unit (9), a high frequency amplifier (13) connected with the matching unit (9) through a coaxial cable (24), and a power control section (12) incorporating a DC amplifier (14). The high frequency amplifier (13) is disposed independently and remotely from the DC amplifier (14) in the vicinity of the matching unit (9)and connected with the DC amplifier (14) through an ordinary cable (25).
申请公布号 WO03046959(A1) 申请公布日期 2003.06.05
申请号 WO2002JP12303 申请日期 2002.11.26
申请人 TOKYO ELECTRON LIMITED;KABUSHIKI KAISHA TOSHIBA;HAYAMI, TOSHIHIRO;ITO, ETSUJI;SAKAI, ITSUKO 发明人 HAYAMI, TOSHIHIRO;ITO, ETSUJI;SAKAI, ITSUKO
分类号 H01J37/32;(IPC1-7):H01L21/02;H01L21/205;H01L21/306;C23C16/50;C23C14/34 主分类号 H01J37/32
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