Diffusion resistor/capacitor (DRC) non-aligned MOSFET structure

摘要

A structure and process for making a non-aligned MOSFET structure for ESD protection using resistor wells as the diffusions and adjustable capacitors. The present invention compensates the shallow extension region without the need for additional masks. The source/drain doping is less than that of a normal MOSFET but extends deeper into the silicon since the present invention uses a resistor well as the source/drain. The deeper emitter/collector increases the second trigger current of the NFET when used as an ESD protection device.