发明名称 METHOD OF EXTENDING THE STABILITY OF A PHOTORESIST DURING DIRECT WRITING OF AN IMAGE UPON THE PHOTORESIST
摘要 In photomask making, the environmental sensitivity of a chemically amplified photoresist is eliminated, or at least substantially reduced, by overcoating the photoresist with a thin coating (topcoat) of a protective but transmissive material. To provide improved stability during the long time period required for direct writing of a photomask pattern, typically in the range of about 20 hours, the protective topcoat material is pH adjusted to be as neutral in pH as possible, depending on other process variable requirements. For example, a pH adjusted to be in the range from about 5 to about 8 is particularly helpful. Not only is the stability of the chemically amplified photoresist better during direct writing when the protective topcoat is pH adjusted, but a photoresist-coated substrate with pH adjusted topcoat over its surface can be stored longer prior to imaging without adverse consequences.
申请公布号 WO03046658(A1) 申请公布日期 2003.06.05
申请号 WO2002US37237 申请日期 2002.11.19
申请人 APPLIED MATERIALS, INC. 发明人 MONTGOMERY, MELVIN, WARREN;MONTGOMERY, CECILIA, ANNETTE
分类号 G03F7/039;G03F1/08;G03F7/004;G03F7/09;G03F7/11;H01L21/027;(IPC1-7):G03F1/00 主分类号 G03F7/039
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