| 摘要 |
Preparations are performed in advance of obtaining data showing a relationship between a size and an exposure dose and data showing a relationship between a size and a focal position when three patterns for measuring changes in exposure conditions are formed. Then, the three patterns are actually formed on a semiconductor substrate and sizes of the patterns are measured. By estimating a change amount of the exposure dose, a change amount of the focal position and a direction of change in focal point between a data preparation step and a pattern formation step in an actual exposure process, an exposure dose and a focal position in an exposure apparatus for next lot are properly adjusted. As a result, obtained are a fabrication method for a semiconductor device, capable of controlling exposure conditions in an exposure process more strictly and a semiconductor device fabricated using the method.
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