Semiconductor integrated circuit device and process for manufacturing the same

摘要

A field oxide film 3 in a region where relief cells are formed is made wider than the field oxide film 3 in a region where normal memory cells are formed thereby to make a field relaxation layer 8r of the relief cells deeper than the field relaxation layer 8 of the normal cells, and the depletion layer of the sources and drains (n-type semiconductor regions) of the relief cells is widened to weaken the junction field.