| 摘要 |
A BGA semiconductor device using an insulating film and having air purge holes situated between metal through-holes in a base film serving as a substrate Stagnant air can be purged from voids formed between the insulating film arranged on the upper face of a wiring pattern on the base film and the wiring pattern via the air purge holes before electronic elements formed with chip bonding are packaged with asealing resin.
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