发明名称 GaN related compound semiconductor and process for producing the same
摘要 A layer comprising cobalt (Co) is formed on a p+ layer by vapor deposition, and a layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electrode therefore has reduced contact resistance and improved light transmission properties, and gives a light-emitting pattern which is stable over a long time. Furthermore, since cobalt (Co) is an element having a large work function, satisfactory ohmic properties are obtained.
申请公布号 US6573117(B2) 申请公布日期 2003.06.03
申请号 US20020053570 申请日期 2002.01.24
申请人 TOYODA GOSEI CO., LTD. 发明人 UEMURA TOSHIYA;SHIBATA NAOKI;NOIRI SHIZUYO;MURAKAMI MASANORI;KOIDE YASUO;ITO JUN
分类号 H01L33/00;H01L33/32;H01L33/42;(IPC1-7):H01L21/00;H01L21/28 主分类号 H01L33/00
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