| 摘要 |
PURPOSE: A flash memory device of a multi-bank structure is provided to perform a dual operation the multi-bank structure by sorting input addresses into read addresses and write addresses. CONSTITUTION: A plurality of banks(100-400) includes a plurality of memory cell arrays(208,211,214,217) and a plurality of row and column decoders(207,210,213,216). An address sorting portion(202) sorts input addresses into read addresses and write addresses. The first selection portion(203,204) performs a read operation by selecting one bank from the plural banks. The second selection portion(205,206) performs a write operation by selecting one bank from the plural banks. A plurality of sense amplifiers(219,220) are used for comparing data of the banks with a reference cell. A pumping portion(221) applies the predetermined bias to the banks.
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