| 摘要 |
PURPOSE: A plasma etching apparatus is provided to be capable of efficiently controlling the flow of plasma by using a support part. CONSTITUTION: A chamber(200) is used for etching a wafer(900). A support part(204) is installed in the chamber(200) for supporting the wafer(900). A gas supply part(206) is connected to the chamber(200) for supplying etching gas into the chamber(200). An electrode part(202) is spaced more apart than two times of the diameter of the wafer(900) from the wafer(900), wherein the electrode part(202) is supplied with RF(Radio Frequency) power for transforming the etching gas into plasma. Preferably, the support part(204) is supplied with bias power of 500-5000 Watt for uniformly inducing the plasma on the wafer(900).
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