发明名称 |
LAYER-BY-LAYER ETCH APPARATUS USING NEUTRAL BEAM AND ETCHING METHOD THEREOF |
摘要 |
PURPOSE: A layer-by-layer etch apparatus using neutral beam and an etching method thereof are provided to reduce an electrical and a physical damage by using the neutral beam instead of ion beam. CONSTITUTION: A stage(60) is installed in the inside of a reaction chamber(90) in order to load a target substrate(62). A neutral beam generation portion(10) generates the neutral beam from a source gas in order to supply the neutral beam in the inside of the reaction chamber. A shutter(20) is installed between the neutral beam generation portion and the reaction chamber in order to control the supply amount of the neutral beam. An etch gas supply portion(30) supplies an etch gas in the inside of the reaction chamber. A purge gas supply portion(80) supplies a purge gas in the inside of the reaction chamber. A control portion(50) controls the supply of the source gas, the etch gas, and the purge gas and an opening/shutting operation of the shutter.
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申请公布号 |
KR20030042959(A) |
申请公布日期 |
2003.06.02 |
申请号 |
KR20010073881 |
申请日期 |
2001.11.26 |
申请人 |
SUNGKYUNKWAN UNIVERSITY |
发明人 |
CHO, SEONG MIN;JUNG, MIN JAE;JUNG, SE HUN;LEE, DO HAENG;YUM, GEUN YEONG |
分类号 |
H01L21/3065;C23F4/00;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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