发明名称 CVD APPARATUS
摘要 PURPOSE: To provide a CVD apparatus which supplies active species to a film- forming space by using a separating plasma-generating space, enables multiple- faces film formation, reduces a cost of the multiple-faces film formation, and simplifies a configuration of the apparatus. CONSTITUTION: The CVD apparatus comprises having the plasma generation space separated from the film-forming space, taking out the active species from plasma, forming the film on the substrate in the film-forming space based on the CVD reaction, and having a structure 11 consisting of an RF application electrode 12 and an earth electrode 13; arranging the plasma generation space between both electrodes 12 and 13, and the RF application electrode so as to be surrounded by the earth electrode; and forming the film simultaneously on the several substrates which oppose to the structure from each different direction, and are arranged so as to be associated with locations of the RF application electrode, the earth electrode, and the substrate. Just one high frequency power source 27 for supplying an RF electric power to the RF application electrode is installed regardless of the number of the earth electrodes or the substrates.
申请公布号 KR20030043734(A) 申请公布日期 2003.06.02
申请号 KR20020073931 申请日期 2002.11.26
申请人 ANELVA CORPORATION 发明人 SATO MASANORI
分类号 C23C16/509;C23C16/452;C23C16/50;C23C16/505;H01L21/205;(IPC1-7):C23C16/50 主分类号 C23C16/509
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