METHOD FOR FORMING PATTERN

摘要

PURPOSE: A method for forming a pattern in a semiconductor device is provided to be capable of minimizing the deformation of a photoresist pattern. CONSTITUTION: A tungsten nitride layer(16) as a hard mask is formed on an etch object layer. The first photoresist pattern is formed on the tungsten nitride layer(16) by using ArF exposing source. The first photoresist pattern is removed. At this time, etch residues are generated. Cleaning process is then performed so as to remove the etch residues. In order to recover the surface of the damaged tungsten nitride layer(16), nitridation treatment is performed by using NH3 plasma. Then, the second photoresist pattern is formed on the tungsten nitride layer(16) by using ArF or KrF exposing source. A hard mask is formed by selectively etching the tungsten nitride layer(16) by using the second photoresist pattern as a mask. The etch object layer is then etched by using the hard mask as a mask.