发明名称 ATMOSPHERIC PRESSURE PLASMA PROCESSING SYSTEM AND METHOD
摘要 PROBLEM TO BE SOLVED: To provide an atmospheric pressure plasma processing system which can hold durability of discharge electrodes for a long time to perform stable discharge, and suppress the condensation to electrode parts to stably deposit films for a long time, and to provide an atmospheric pressure plasma processing method. SOLUTION: The atmospheric pressure plasma processing system has a discharge space which is provided by arranging a voltage application electrode and an grounded electrode opposite to each other, a voltage application means for applying a voltage to the voltage application electrode and the grounded electrode and a gas introducing means for introducing reactive gas and inert gas into the discharge space. In the atmospheric pressure plasma processing system in which the surface of a base material is processed by applying a voltage by the voltage application means under a pressure close to atmospheric pressure, generating discharge plasma by exciting the reactive gas introduced into the discharge space, and exposing the base material to the discharge plasma, the discharge surfaces of the voltage application electrode and the earth electrode are constituted so as not to be brought into direct contact with the reactive gas.
申请公布号 JP2003155571(A) 申请公布日期 2003.05.30
申请号 JP20020238892 申请日期 2002.08.20
申请人 KONICA CORP 发明人 FUKUDA KAZUHIRO;KONDO YOSHIKAZU;TODA YOSHIRO;OISHI KIYOSHI;MIZUNO KO
分类号 H05H1/24;C23C16/507;H01L21/205 主分类号 H05H1/24
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