| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the isolation region has no void nor recess at the upper end of a trench. SOLUTION: A silicon oxide film 102 on a semiconductor substrate 101 is etched in the surface direction thereof using hydrofluoric acid. Inner wall face of trenches 105a, 105b and 105c made in the silicon substrate 101 and the side face of a silicon nitride film 103 are dry etched. Consequently, the silicon oxide film 102 and the silicon nitride film 103 do not stretch over the trenches 105a, 105b and 105c and no void nor recess occur in a silicon oxide film 107 in the trenches 105a, 105b and 105c.
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