| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which can apply superior processing to a substrate by controlling an air flow in a processing chamber for processing the substrate. SOLUTION: A straightening plate 70 is arranged which is formed of porous ceramics and provided with vertical holes 70c and gas barrier layers 70d. The ceramics has communication holes wherein pores are linked together and stretched in a three-dimensional direction. The vertical holes 70c has aperture parts in a first surface and a second surface facing the first surface. The gas barrier layers 70d are formed on the first surface and inner walls of the vertical holes. Via the communication holes, gas is supplied to a processing surface of a wafer W, or gas in a chamber is discharged. Via the vertical holes 70c, the gas in the chamber is discharged, or gas is supplied to the processing surface of the wafer W. |
