| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an input/output structure of a semiconductor by which a high frequency power amplifier can be made small-sized and low-priced by making it possible to greatly reduce phase differences between width-directional center parts and edge parts of the gate electrode and drain electrode of an FET and improve the maximum capable power gain and power addition efficiency of a part of the FET. SOLUTION: On a metal carrier 6, a dielectric substrate 5 and the FET 1 are fixed and on this dielectric substrate 5, a microstrip line is formed; and the gate electrode 2 and drain electrode 3 of the FET 1 and an input/output upper electrode 7 of a microstrip line which is wider than the microstrip line are connected by a plurality of metal wires 4, which are made longer from the width-directional edge part to the center part of the FET 1.</p> |
