| 发明名称 |
Semiconductor device having an indium doped dielectric layer located therein and a method of manufacture therefor |
| 摘要 |
The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the semiconductor device. The semiconductor device includes a semiconductor substrate and an indium doped dielectric layer located over the semiconductor substrate. |
| 申请公布号 |
US2003100195(A1) |
申请公布日期 |
2003.05.29 |
| 申请号 |
US20010997650 |
申请日期 |
2001.11.28 |
| 申请人 |
AGERE SYSTEMS INC. |
发明人 |
DUNCAN JULIA C.;MINFORD WILLIAM J.;OSENBACH JOHN W. |
| 分类号 |
H01L21/314;H01L21/316;H01L21/322;H01L21/8238;H01L23/31;H01L27/092;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
H01L21/314 |
| 代理机构 |
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代理人 |
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| 主权项 |
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