METHOD FOR CHEMICAL MECHANICAL POLISHING TO SUPPRESS SCRATCH

摘要

PURPOSE: A CMP(Chemical Mechanical Polishing) method is provided to suppress a scratch and to remove the generated scratch. CONSTITUTION: A residual film(310a) is polished by using a polishing pad of a main station while supplying a slurry to the surface of a film. The residual film is polished in a buffing station to remove a scratch(320) on the surface of the film. Thereby, the scratch is minimized and the yield ratio of a device is improved. Moreover, the generated scratch is removed by using a soft pad in a buffing process.