METHOD FOR FABRICATING COMPLEMENTARY METAL OXIDE SEMICONDUCTOR IMAGE SENSOR

摘要

PURPOSE: A method for fabricating a complementary metal oxide semiconductor(CMOS) image sensor is provided to improve photosensitivity of the whole image sensor by eliminating the loss of optical energy of the light incident on the center portion of a micro lens while being capable of condensing in the same way as a conventional technology. CONSTITUTION: A underlying layer(10) is prepared in which a relative device including a light receiving device and a color filter is formed. A micro lens(11) of a spacer shape is formed on the underlying layer corresponding to the periphery of the edge of the light receiving device.