发明名称 |
Fabrication of film bulk acoustic resonator |
摘要 |
A method of fabricating an air gap type Film Bulk Acoustic Resonator (FBAR) is provided. The FBAR fabrication method includes: (a) depositing and patterning a sub-electrode on a semiconductor substrate; (b) depositing and patterning a piezoelectric material layer on the sub-electrode; (c) depositing and patterning an upper electrode on the piezoelectric material layer; (d) forming a hole which passes through the upper electrode, the piezoelectric material layer and the sub-electrode; and (e) injecting a fluorine compound into the hole so that an air gap can be formed on the semiconductor substrate, and non-plasma etching the semiconductor substrate. Since the FBAR fabrication method does not include forming and eliminating the sacrificial layer in the fabrication process, the fabrication process is simplified. In addition, the air gap having the limitless frequency selectivity can be formed and the performance of the FBAR can be enhanced. <IMAGE> |
申请公布号 |
EP1315293(A2) |
申请公布日期 |
2003.05.28 |
申请号 |
EP20020009756 |
申请日期 |
2002.04.30 |
申请人 |
SAMSUNG ELECTRONICS CO. LTD. |
发明人 |
SEO, O-GWEON;JUN, CHAN-BONG;PARK, MAN-GEUM |
分类号 |
H01L41/09;H01L41/08;H01L41/22;H03H3/02;H03H9/00;H03H9/17 |
主分类号 |
H01L41/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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