COMPLEMENTARY METAL OXIDE SEMICONDUCTOR IMAGE SENSOR AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A complementary metal oxide semiconductor(CMOS) image sensor is provided to control dark current while maintaining photosensitivity of an image sensor by controlling the generation of dark current while guaranteeing the same dead zone characteristic as a conventional technology. CONSTITUTION: A gate of a transfer transistor(27) is formed on a semiconductor substrate(21). An N- impurity region(23) having a lightly-doped-drain(LDD) structure is formed in the semiconductor substrate positioned at one side of the gate. A P0 impurity region(24) is formed between the upper portion of the N- impurity region and the surface of the semiconductor substrate. A floating diffusion region(26) is formed at the other side of the gate.