| 摘要 |
Plural p<+>-type regions are formed at a silicon substrate, and thereafter, an n<+>-type epitaxial growth layer is formed. Then, narrow concave portions are formed so as to be extended between the surface of the epitaxial growth layer 14 and the silicon substrate and to have the almost same lateral sectional shape. As a result, remaining parts, defined by the concave portions, of the epitaxial growth layer on p<+>-type field limiting rings are separated from the silicon substrate, and thus, a depletion layer is spread beyond the field limiting rings and a large forward voltage-resistance can be realized. <IMAGE> |
