| 摘要 |
A method of forming capacitor dielectric structure. The method includes steps of providing a semiconductor substrate having at least a predetermined capacitor structure, using silicon nitride deposition to form a SiN layer on the predetermined capacitor structure, using a reoxidation process to grow an oxide layer on the SiN layer, and using a nitridation process with N2O as a reactive gas to form a nitridation layer on the oxide layer.
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