发明名称 |
Method of fabricating read only memory |
摘要 |
A method of fabricating a read only memory. After forming bit lines and word lines in a substrate, a coding process is performed. A photoresist layer is formed on the substrate while performing the coding process. The photoresist layer covering a part of a first channel region under the word line is exposed, and then the photoresist layer covering a part of a second channel region under the word lines is exposed. A development step is performed to remove the photoresist layer that has been exposed. Using the remaining photoresist layer as a mask to perform an ion implantation, a coding area is formed in the first channel region and the second channel region. The photoresist layer is removed.
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申请公布号 |
US6569713(B2) |
申请公布日期 |
2003.05.27 |
申请号 |
US20010881819 |
申请日期 |
2001.06.15 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHEN CHIH-PING |
分类号 |
H01L21/8246;H01L27/112;(IPC1-7):H01L21/82 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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