发明名称 Magnetoresistance effect film and device
摘要 A magnetic layer which is exchange-coupled to an antiferromagnetic layer and given an exchange bias therefrom is laminated via a non-magnetic layer on another magnetic layer to form an MR film. The antiferromagnetic layer (PtMn, PdMn or NiMn) is laminated on a ground layer(Zr, Hf, Zr-Hf, Zr-Co, Zr-Au, Ni-O, Co-O or Fe-O) so that the antiferromagnetic layer has a surface of an average roughness of 1-5 Å. A conduction layer is formed adjacent to the magnetic layer for sensing a magnetic field. The conduction layer is made of Cu, Ag, Au or an alloy composed of two selected therefrom. A layer made of Zr, Ta, Zr-O, Ta-O or a mixture thereof is laminated on the conduction layer. The MR film exhibits a large resistance variation linearly at near zero magnetic field with an excellent thermal stability.
申请公布号 US6570744(B1) 申请公布日期 2003.05.27
申请号 US20000586560 申请日期 2000.05.25
申请人 TDK CORPORATION 发明人 FUJIKATA JUNICHI;NAKADA MASAFUMI
分类号 H01F10/26;G01R33/09;G11B5/39;H01F10/08;H01F10/28;H01F10/32;H01F41/30;H01L43/08;H01L43/10;(IPC1-7):G11B5/39 主分类号 H01F10/26
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