| 摘要 |
A semiconductor device forms a protective diode with a high breakdown voltage at a power terminal of a power IC. An N-type well is formed in a P-type semiconductor substrate, the well electrically connected to a power supply terminal. An N-type channel stopper region is formed in the well. A P-type substrate pickup region is formed outside the well. The distance between the substrate pickup region and the channel stopper region is adjusted such that the breakdown voltage of the parasitic diode is not lower than the rated voltage and not higher than the breakdown voltage of the high voltage PMOSFET fabricated in the well. The protective diode absorbs electrostatic breakdown and electrical noises without an additional circuit protection device or manufacturing process.
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