发明名称 |
Semiconductor device and its production process |
摘要 |
A process for producing a semiconductor device comprising the steps of: forming a metal wiring layer containing copper as the main component on a semiconductor substrate; forming an insulating film on the entire surface of the resulting semiconductor substrate; removing the insulating film only from a place where a wire of gold or aluminum is to be bonded, in order to expose a part of the metal wiring layer; forming a layer of copper silicide or a layer of a compound of copper and boron in a surface layer of the exposed part of the metal wiring layer; and bonding a wire to a surface of the layer of copper silicide or the layer of the compound of copper and boron.
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申请公布号 |
US6569767(B1) |
申请公布日期 |
2003.05.27 |
申请号 |
US20000697161 |
申请日期 |
2000.10.27 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
FUJISAWA KAZUNORI;AWAYA NOBUYOSHI |
分类号 |
H01L23/52;H01L21/3205;H01L21/60;H01L21/768;H01L23/485;H01L23/532;(IPC1-7):H01L21/44 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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