| 摘要 |
A semiconductor device is provided which is capable of reducing direct current resistance in a signal line, of reducing a high-frequency resistance even in the case of transmitting high-frequency signals and, therefore, of increasing power gain when employed in, for example, an MMIC for high power. The semiconductor device has a microstrip line containing an interlayer dielectric and signal line formed on a semiconductor substrate on which predetermined circuit devices are mounted, wherein the signal line is made multi-layered with the interlayer dielectric interposed among the multiple layers and wherein the interlayer dielectric is made so thin that pin holes are produced and each layer constituting the signal line is electrically connected to each other through the pin holes.
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