发明名称 |
Method for enhancing plasma processing performance |
摘要 |
A method of improving plasma processing of a semiconductor wafer by exposing the wafer or the plasma to photons while the wafer is being processed. One embodiment of the method comprises the steps of etching an aluminum layer and, during the etching, exposing the semiconductor wafer containing the aluminum layer to photons that photodesorb copper chloride from the surface of the layer thus improving the etch process performance.
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申请公布号 |
US6569775(B1) |
申请公布日期 |
2003.05.27 |
申请号 |
US20000506065 |
申请日期 |
2000.02.17 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
LOEWENHARDT PETER K.;YAMARTINO JOHN M.;CHEN HUI;MA DIANA XIAOBING |
分类号 |
H01L21/302;H01L21/3065;H01L21/3213;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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