| 摘要 |
PURPOSE: A multi stack semiconductor device is provided to improve memory capacity by inserting a package to a slot and to improve radiation by forming a radiation fin in a housing. CONSTITUTION: A housing(11) can stack a package(1) which comprises many stories of metal thin plates(5) with insulative adhesive. Slots are formed in the housing for inserting the packages. A radiation fin(6) is formed at outside of the metal thin plate and the pitch of the metal thin plate is equal to the pitch of an outer lead(2).
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